v rrm = 400 v - 600 v i f(av) = 400 a features ? high surge capability twin tower package ? types from 400 to 600 v v rrm ? not esd sensitive parameter symbol MUR40040CT(r) unit repetitive peak reverse voltage v rrm 400 v rms reverse voltage v rms 280 v MUR40040CT thru mur40060ctr maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions silicon super fast recover y diode mur40060ct(r) 600 420 dc blocking voltage v dc 400 v operating temperature t j -55 to 150 c storage temperature t stg -55 to 150 c parameter symbol MUR40040CT(r) unit a verage forward current (per pkg) i f(av) 400 a peak forward surge current (per leg) i fsm 3300 a maximum instantaneous forward voltage (per leg) 1.3 25 a 3ma maximum reverse recovery time (per leg) t rr 180 ns thermal characteristics maximum thermal resistance, junction - case (per leg) r jc 0.35 c/w t j = 125 c v 3 240 0.35 i f =0.5 a, i r =1.0 a, i rr = 0.25 a t c = 125 c t p = 8.3 ms, half sine t j = 25 c i fm = 200 a, t j = 25 c conditions 25 electrical characteristics, at tj = 25 c, unless otherwise specified maximum reverse current at rated dc blocking voltage (per leg) i r v f -55 to 150 -55 to 150 1.7 mur40060ct(r) 400 3300 600 www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 1
MUR40040CT thru mur40060ctr www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. MUR40040CT thru mur40060ctr www.genesicsemi.com/s ilicon-products/super-fast-recovery-rectifiers/ 3
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